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| SI2308DS Vishay Siliconix N-Channel 60-V (D-S) MOSFET PRODUCT SUMMARY VDS (V) 60 rDS(on) (W) 0.16 @ VGS = 10 V 0.22 @ VGS = 4.5 V ID (A) "2.0 "1.7 TO-236 (SOT-23) G 1 3 D S 2 Top View SI2308DS (A8)* *Marking Code ABSOLUTE MAXIMUM RATINGS (TA = 25_C UNLESS OTHERWISE NOTED) Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current (TJ = 150_C)a 150 C) Pulsed Drain Currentb Continuous Source Current (Diode Conduction)a Maximum Power Dissipationa Operating Junction and Storage Temperature Range TA = 25_C TA = 70_C TA = 25_C TA = 70_C Symbol VDS VGS ID IDM IS PD TJ, Tstg Limit 60 "20 "2.0 "1.6 "10 1.0 1.25 0.80 -55 to 150 Unit V A W _C THERMAL RESISTANCE RATINGS Parameter Maximum Junction-to-Ambienta Maximum Junction-to-Ambientc Notes a. Surface Mounted on FR4 Board, t = v5 sec. b. Pulse width limited by maximum junction temperature. c. Surface Mounted on FR4 Board For SPICE model information via the Worldwide Web: http://www.vishay.com/www/product/spice.htm Document Number: 70797 S-58492--Rev. A, 15-June-98 www.vishay.com S FaxBack 408-970-5600 RthJA Symbol Maximum 100 166 Unit _C/W 2-1 SI2308DS Vishay Siliconix SPECIFICATIONS (TJ = 25_C UNLESS OTHERWISE NOTED) Parameter Static Drain-Source Breakdown Voltage Gate-Threshold Voltage Gate-Body Leakage Zero Gate Voltage Drain Current V(BR)DSS VGS(th) IGSS IDSS VDS = 0 V, ID = 250 mA VDS = VGS, ID = 250 mA VDS = 0 V, VGS = "20 V VDS = 60 V, VGS = 0 V VDS = 60 V, VGS = 0 V, TJ = 55_C VDS w 4.5 V, VGS = 10 V VDS w 4.5 V, VGS = 4.5 V VGS = 10 V, ID = 2.0 A rDS( ) DS(on) gfs VSD VGS = 4.5 V, ID = 1.7 A VDS = 4.5 V, ID = 2.0 A IS = 1 A, VGS = 0 V 6 A 4 0.125 0.155 4.6 0.77 1.2 0.16 0.22 W S V 60 V 1.5 "100 0.5 10 nA mA Symbol Test Condition Min Typ Max Unit On-State Drain Currenta ID(on) Drain-Source On-State Drain Source On State Resistancea Forward Transconductancea Diode Forward Voltagea Dynamic Total Gate Charge Gate-Source Charge Gate-Drain Charge Input Capacitance Output Capacitance Reverse Transfer Capacitance Qg Qgs Qgd Ciss Coss Crss VDS = 25 V, VGS = 0 V f = 1 MH V V, MHz VDS = 30 V, VGS = 10 V ID = 2.0 A V V, 20 4.8 0.8 1.0 240 50 15 pF F 10 nC C Switching Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Notes a. Pulse test; pulse width v 300 ms, duty cycle v 2%. td(on) tr td(off) tf VDD = 30 V, RL = 30 W V, ID ^ 1 A, VGEN = 4 5 V RG = 6 W A 4.5 V, 7 10 17 6 15 20 ns 35 15 www.vishay.com S FaxBack 408-970-5600 2-2 Document Number: 70797 S-58492--Rev. A, 15-June-98 SI2308DS Vishay Siliconix TYPICAL CHARACTERISTICS (25_C UNLESS NOTED) Output Characteristics 12 VGS = 10 thru 5 V I D - Drain Current (A) I D - Drain Current (A) 9 4V 9 12 Transfer Characteristics 6 6 3 3V 1, 2 V 0 0 2 4 6 8 10 3 TC = 125_C 25_C 0 0 1 2 3 4 5 -55_C VDS - Drain-to-Source Voltage (V) VGS - Gate-to-Source Voltage (V) On-Resistance vs. Drain Current 1.0 400 Capacitance r DS(on) - On-Resistance ( W ) 0.8 C - Capacitance (pF) 300 Ciss 0.6 200 0.4 VGS = 4.5 V 100 Crss VGS = 10 V 0.2 Coss 0 0 3 6 ID - Drain Current (A) 9 12 0 0 6 12 18 24 30 VDS - Drain-to-Source Voltage (V) Gate Charge 10 V GS - Gate-to-Source Voltage (V) VDS = 30 V ID = 2.0 A 2.0 1.8 r DS(on) - On-Resistance (W) (Normalized) 1.6 1.4 1.2 1.0 0.8 0 0 1 2 3 4 5 0.6 -50 On-Resistance vs. Junction Temperature 8 VGS = 10 V ID = 2.0 A 6 4 2 -25 0 25 50 75 100 125 150 Qg - Total Gate Charge (nC) TJ - Junction Temperature (_C) Document Number: 70797 S-58492--Rev. A, 15-June-98 www.vishay.com S FaxBack 408-970-5600 2-3 SI2308DS Vishay Siliconix TYPICAL CHARACTERISTICS (25_C UNLESS NOTED) Source-Drain Diode Forward Voltage 10 0.6 On-Resistance vs. Gate-to-Source Voltage 0.5 r DS(on) - On-Resistance ( W ) I S - Source Current (A) 0.4 TJ = 150_C 0.3 ID = 2.0 A 0.2 TJ = 25_C 0.1 1 0.00 0.2 0.4 0.6 0.8 1.0 1.2 0 0 2 4 6 8 10 VSD - Source-to-Drain Voltage (V) VGS - Gate-to-Source Voltage (V) Threshold Voltage 0.4 ID = 250 mA 9 V GS(th) Variance (V) -0.0 Power (W) 12 Single Pulse Power 0.2 -0.2 6 -0.4 3 -0.6 -0.8 -50 0 -25 0 25 50 75 100 125 150 0.01 0.1 1 Time (sec) 10 100 TJ - Temperature (_C) Normalized Thermal Transient Impedance, Junction-to-Ambient 2 1 Normalized Effective Transient Thermal Impedance Duty Cycle = 0.5 0.2 0.1 0.1 0.05 0.02 Single Pulse 0.01 10-4 10-3 10-2 10-1 1 10 100 500 Square Wave Pulse Duration (sec) www.vishay.com S FaxBack 408-970-5600 2-4 Document Number: 70797 S-58492--Rev. A, 15-June-98 |
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